| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor epitaxial wafer that comprises a buffer layer which suppresses occurrence and propagation of threading dislocation caused by defects of an SiC substrate. SOLUTION: In the group III-V nitride semiconductor epitaxial wafer, an AlN buffer layer 2 is formed on an SiC substrate 1, and a group III-V nitride semiconductor crystal is formed on the AlN buffer layer 2. In the AlN buffer layer 2, group IV element is uniformly doped at concentration of 1×10<SP>19</SP>cm<SP>-3</SP>or higher. COPYRIGHT: (C)2006,JPO&NCIPI
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