发明名称 SOLID STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a solid state imaging device which can provide a solid state imaging device which can suppress the decrease of the transfer efficiency of charges while it controls that the charges are mutually mixed between the adjacent charge transfer paths (charge transfer regions). SOLUTION: This solid state imaging device is arranged on the charge transfer route 6 which constitutes a channel which transfers electrons, and includes a plurality of perpendicular transfer electrodes 7 and horizontal transfer electrode 8a for making electron transfer, and a plurality of p-type channel stop regions 9 arranged so that the perpendicular charge transfer line 6a may be inserted. Moreover, the perpendicular charge transfer line 6a has a region having a channel width W1, and a region having a channel width W2 smaller than the channel width W1. A boundary 6c of the region having the channel width W1 of the perpendicular charge transfer line 6a and the region having the channel width W2 is arranged in a region between the adjacent perpendicular transfer electrode 7 and the horizontal transfer electrode 8a. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006120743(A) 申请公布日期 2006.05.11
申请号 JP20040305125 申请日期 2004.10.20
申请人 SANYO ELECTRIC CO LTD 发明人 ODA SHINKO
分类号 H01L27/148;H04N5/335;H04N5/341;H04N5/357;H04N5/369;H04N5/372 主分类号 H01L27/148
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