发明名称 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
摘要 The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
申请公布号 US2006099814(A1) 申请公布日期 2006.05.11
申请号 US20040982486 申请日期 2004.11.05
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 CARTER PHILLIP W.;JOHNS TIMOTHY P.
分类号 C09K13/00;B44C1/22;H01L21/302 主分类号 C09K13/00
代理机构 代理人
主权项
地址