发明名称 |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
摘要 |
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
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申请公布号 |
US2006099814(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20040982486 |
申请日期 |
2004.11.05 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
CARTER PHILLIP W.;JOHNS TIMOTHY P. |
分类号 |
C09K13/00;B44C1/22;H01L21/302 |
主分类号 |
C09K13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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