发明名称 Heat treating system and heat treating method
摘要 A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.
申请公布号 US2006099805(A1) 申请公布日期 2006.05.11
申请号 US20050532878 申请日期 2005.04.28
申请人 FUJITA TAKEHIKO;OKADA MITSUHIRO;UMEZAWA KOTA;HASEBE KAZUHIDE;SAKAMOTO KOICHI 发明人 FUJITA TAKEHIKO;OKADA MITSUHIRO;UMEZAWA KOTA;HASEBE KAZUHIDE;SAKAMOTO KOICHI
分类号 C23C16/46;H01L21/44;C23C16/00;C23C16/52;F27B17/00;H01L21/00;H01L21/205;H05B3/02 主分类号 C23C16/46
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