| 摘要 |
The invention relates to a method for producing a vertical transistor component, having the following method steps of: Providing a semiconductor substrate ( 100 ), applying an auxiliary layer ( 110 ) to the semiconductor substrate ( 100 ), patterning the auxiliary layer ( 110 ) for the purpose of producing at least one trench ( 114 ) which extends as far as the semiconductor substrate ( 100 ) and which has opposite sidewalls ( 115 ), producing a monocrystalline semiconductor layer ( 132 ) on at least one of the sidewalls ( 115 ) of the trench ( 114 ), producing an electrode ( 140 ) insulated from the monocrystalline semiconductor layer ( 132 ) on the at least one sidewall ( 115 ) of the trench ( 114 ) and the semiconductor substrate ( 100 ). The invention furthermore relates to a method for producing a vertical transistor component, having the following method steps of: Providing a semiconductor substrate ( 200 ), applying an auxiliary layer ( 210 ) to the semiconductor substrate ( 200 ), patterning the auxiliary layer ( 210 ) for the purpose of producing at least one trench ( 214 ) which extends as far as the semiconductor substrate ( 200 ), producing a monocrystalline semiconductor zone ( 230 ) in the at least one trench ( 213 ), removing the auxiliary layer ( 210 ) at least in sections, producing an electrode ( 240 ) insulated from the monocrystalline semiconductor zone ( 230 ) and the semiconductor substrate.
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