| 摘要 |
A semiconductor device includes a semiconductor substrate, a first oxide layer on the semiconductor substrate including an element from the semiconductor substrate, and a second oxide layer on the first oxide layer opposite the semiconductor substrate. The second oxide layer includes a stoichiometric, single-phase complex oxide represented by the formula: A<SUB>h</SUB>B<SUB>j</SUB>O<SUB>k</SUB>, or equivalently (A<SUB>m</SUB>O<SUB>n</SUB>)<SUB>a</SUB>(B<SUB>q</SUB>O<SUB>r</SUB>)<SUB>b</SUB> in which the elemental oxide components, (A<SUB>m</SUB>O<SUB>n</SUB>) and (B<SUB>q</SUB>O<SUB>r</SUB>) are combined so that h = j or, equivalently, ma = bq, and a, b, h, j, k, m, n, q and r are non-zero integers; and wherein: A is an element of the lanthanide rare earth elements of the periodic table or the trivalent elements from cerium to lutetium; and B is an element of the transition metal elements of groups IIIB, IVB or VB of the periodic table. |
