BISMUTH SUBSTITUTION TYPE TERBIUM-IRON-GARNET SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a garnet single crystal for which Tb is used as a host rare earth element and where the temperature characteristics of a Faraday rotation angle is improved noticeably and to provide the garnet single crystal. SOLUTION: The garnet single crystal is manufactured by an LPE method so that the grating constant of a bismuth substitution type terbium-iron-garnet single crystal for a band range of 1.3μm wavelength is 12.469Åor more and 12.472Åor less and the grating constant of the bismuth substitution type terbium-iron-garnet single crystal for a band range of 1.5μm wavelength is 12.464Åor more and 12.471Åor less. Lead oxide (PbO) and boron oxide (B2O3) as a flux agents and the powders of terbium oxide (Tb4O7), bismuth oxide (Bi2O3) and iron oxide (Fe2O3) as metal oxides to form an oxide garnet epitaxial film are mixed and melted. The garnet single crystal is grown by dipping a non-magnetic garnet crystal substrate having the compositional formula of (GdCa)3(GaMgZr)5O12in the liquid surface of a molten liquid. COPYRIGHT: (C)2006,JPO&NCIPI