| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method of processing a substrate which can perform substrate processing uniformly in a wafer surface. SOLUTION: The substrate processing apparatus includes a reaction chamber which can be decompressed, and a shower head having a gaseous diffusion plate 9 in which through holes 10, 11' and 11 are formed to supply processing gas to the interior of the reaction chamber, and a substrate supporting part for installing the substrate. The through holes 11' and 11 provided in the perimeter region of the gaseous diffusion plate 9 are larger than the area of the outlet part becomes larger than the area of the outlet part. If this apparatus is used, since the processing gas can be supplied uniformly within the gaseous diffusion plate, substrate processing, such as membranous deposition and membranous etching can be performed uniformly. COPYRIGHT: (C)2006,JPO&NCIPI
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