发明名称 Semiconductor structure for imaging detectors
摘要 There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed on a substrate with an active area of each photo-detector being formed on a surface of the substrate, there further being formed for each photo-detector a conductive via through the substrate from an upper surface thereof to a lower surface thereof to connect the active area of each photo-detector to the lower surface of the substrate, wherein a plurality of said sub-arrays of photo-detectors are placed adjacent to each other in a matrix to form the photo-detector array. An imaging system comprising: a radiation detector including such a photo detector array, a radiation source facing the radiation detector, and means for controlling the radiation detector and the radiation source is also disclosed. A method for making such an array is also disclosed.
申请公布号 US2006097290(A1) 申请公布日期 2006.05.11
申请号 US20050522262 申请日期 2005.09.21
申请人 发明人 HIETANEN IIRO
分类号 G01T1/20;H01L27/148;A61B6/03;H01L21/3205;H01L23/48;H01L23/52;H01L27/14;H01L31/103 主分类号 G01T1/20
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