发明名称 Semiconductor device
摘要 In a semiconductor device including a multilayer pad, the multilayer pad comprises a first pad layer provided over a semiconductor substrate to have a first copper wiring region and a first intralayer insulating region provided within the first copper wiring region, and a second pad layer provided over the first pad layer via an interlayer insulating film to have a second copper wiring region and a second intralayer insulating region provided within the second copper wiring region. In the semiconductor device, the first copper wiring region, the first intralayer insulating region, the second copper wiring region, and the second intralayer insulating region are provided in the first and second pad layers such that the multilayer pad has a layout in which all the regions are covered with the copper wiring when the multilayer pad is perspectively viewed from a perpendicularly upper direction for the semiconductor substrate.
申请公布号 US2006097396(A1) 申请公布日期 2006.05.11
申请号 US20050240645 申请日期 2005.10.03
申请人 FUJITSU LIMITED 发明人 KAMIYAMA MASAMICHI;TAKASE MASASHI;WATANABE TAKANORI
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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