| 摘要 |
An erase-verifying method of a NAND type flash memory device and NAND type flash memory device thereof, wherein an erase-verifying operation is performed by applying a positive voltage as a source voltage. Considering a variation width of a threshold voltage of an erase cell, which shifts due to various factors, a negative threshold voltage of an erase cell can be stably verified. Through this, even when the threshold voltage of the erase cell shifts due to disturbance upon subsequent program operation, the number of cells failed can be reduced.
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