发明名称 FET AMPLIFIER WITH ADJUSTABLE DEGENERATION RESISTANCE
摘要 An amplifier (64) comprises an amplifying field-effect transistor (70) having its source connected to ground via an adjustable degeneration resistance (80). A capacitor (76) is connected in parallel to the variable degeneration resistance (80). The degeneration resistance, comprising a field effect transistor, provides adjustable current feedback to the amplifying transistor (70) to stabilise the drain current of the amplifying transistor (70) at a desired value.
申请公布号 WO2006049873(A1) 申请公布日期 2006.05.11
申请号 WO2005US37520 申请日期 2005.10.20
申请人 RAYTHEON COMPANY;HESTON, SCOTT, M. 发明人 HESTON, SCOTT, M.
分类号 H03F1/30 主分类号 H03F1/30
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