| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a Bi-based oxide superconductor thin film whose c-axis is oriented parallel to the substrate surface and whose a-axis (or b-axis) is oriented perpendicular to the substrate surface in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. SOLUTION: The method of manufacturing the a-axis oriented Bi-based oxide superconductor thin film involves an epitaxial growth process using an LaSrAlO<SB>4</SB>single crystal substrate of a (110) plane or an LaSrGaO<SB>4</SB>single crystal substrate of a (110) plane, for which the lattice constant matches well with the (100) plane of the Bi-based oxide superconductor film. By this method, rather than the normally easily obtained Bi-2212, an a-axis oriented film of Bi-2223 showing an extremely high superconductive transition temperature even for a Bi-based oxide superconductor can be selectively manufactured. COPYRIGHT: (C)2006,JPO&NCIPI
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