Dose uniformity during scanned ion implantation

摘要

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.