| 摘要 |
A semiconductor memory element that stores data as a resistance difference. The memory element comprises a MIS transistor, a two-terminal variable resistor element, and a fixed resistor element. The MIS transistor has a gate. The two-terminal variable resistor element is connected between the gate of the MIS transistor and a first power-supply terminal. The variable resistor element has a resistance that changes in accordance with a current flowing in the variable resistor element or the direction in which the current flows and that remains unchanged when the current is made to stop flowing. The fixed resistor element is connected between the gate of the MIS transistor and a second power-supply terminal.
|
