| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability of an entire system by relaxing concentration of writing into the specific region of an EEPROM in a nonvolatile semiconductor memory system, and to provide its control method. <P>SOLUTION: The nonvolatile semiconductor memory system comprises a plurality of blocks which can collectively be erased, following block numbers for connecting file data divided into a plurality of data in a chain shape and managing them as one file data, writing flags for indicating presence or no presence of data in the block, and the EEPROM 11 having the following block numbers and the writing flags as block control information 16, a RAM12 into which the leading block number 17 of the file data that are connected in the chain shape is stored, and a CPU14 which selects blocks on the basis of random numbers and the writing flags and sets the leading block number and the following block number so that the blocks are connected in the chain shape. Also provided is a control method therefor. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
