METHOD FOR FORMING CONTACT PAD ESPECIALLY TO TRANSISTOR ELECTRODE IN IC REGION

摘要

PROBLEM TO BE SOLVED: To provide an easy method for forming a compact pad whose manufacturing cost can be reduced. SOLUTION: A region 51 is an area 510 that extends at least up to part of the front surface of the region, and can be locally changed for the purpose of forming the area using a material that can be selectively removed from the region. This region is covered with an insulating material 7, and an orifice 90 that appears on the front surface of the area 510 is formed in the insulating material. The material that can be selectively removed is removed from this area through the orifice so that a cavity 520 may be formed in place of this area. The cavity and the orifice are filled up with at least one conductive material 91. COPYRIGHT: (C)2006,JPO&NCIPI