发明名称 |
System and method for improved dopant profiles in CMOS transistors |
摘要 |
According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a gate stack on an outer surface of a semiconductor body. First and second sidewall bodies are formed on opposing sides of the gate stack. A first recess is formed in an outer surface of the gate stack, and a first dopant is implanted into the gate stack after the first recess is formed. The first dopant diffuses inwardly from the outer surface of the gate stack that defines the first recess. The first dopant diffuses toward an interface between the gate stack and the semiconductor body. The first recess increases the concentration of the first dopant at the interface.
|
申请公布号 |
US2006099744(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20040987674 |
申请日期 |
2004.11.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHIDAMBARAM PR;CHAKRAVARTHI SRINIVASAN |
分类号 |
H01L21/8232;H01L21/8234 |
主分类号 |
H01L21/8232 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|