METHOD FOR ORGANIC MONOMOLECULAR LAYER FORMATION AND PROCESS FOR PRODUCING FUNCTIONAL ELEMENT

摘要

A hydrogen terminating n-type semiconductor substrate, which comprises at least one element selected from the group consisting of Si, Ge, and C and has a diamond structure, is used as a working electrode. While selectively applying light having a higher photon energy than the energy gap of the hydrogen terminating n-type semiconductor substrate to the surface of the hydrogen terminating n-type semiconductor substrate, an electrode reaction is allowed to proceed in a solution containing a Grignard reagent to form a predetermined pattern of an organic monomolecular layer on the surface of the hydrogen terminating n-type semiconductor substrate.