发明名称 |
Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode |
摘要 |
The present invention relates to a method of forming a diode (2) for integration with a semiconductor device comprising the steps of providing a layer (4) of semiconductor material, forming a dielectric layer (6) over the layer of semiconductor material, introducing a first conductivity type dopant into the dielectric layer (6), forming a semi-conductive layer (8) over the dielectric layer (6), introducing a second conductivity type dopant into a first region (12) of the semi-conductive layer and re-distributing the first conductivity type dopant from the dielectric layer (6) into the semi-conductive layer (8) so as to form a second region (18) of the first conductivity type dopant in the semi-conductive layer (8), the second region (18) being adjacent the first region (12) so as to provide a P/N junction of the diode (2). <IMAGE> |
申请公布号 |
DE69926002(T2) |
申请公布日期 |
2006.05.11 |
申请号 |
DE1999626002T |
申请日期 |
1999.11.17 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
REYNES, JEAN-MICHEL;DERAM, IVANA;STEFANOV, EVGUENIY |
分类号 |
H01L27/06;H01L21/225;H01L21/329;H01L21/336;H01L27/08;H01L29/78 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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