ION BEAM SPUTTERING EQUIPMENT AND METHOD FOR FORMING MULTILAYER FILM FOR REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

摘要

A method for forming a multilayer film for an EUV mask blank, by which defects due to mixing of particles in a film being formed is eliminated, and ion beam sputtering equipment suitable for such method. The method is provided for forming the multilayer film for the reflective mask blank for EUV lithography on a film forming substrate by using ion beam sputtering method. The method is characterized in that a sputtering target and the film forming substrate are arranged to face each other at a prescribed interval, and ion beams are permitted to enter the sputtering target from an ion source arranged at a position outside a region where particles can linearly move in a direction toward the sputtering target from the film forming substrate.