| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method capable of efficiently manufacturing a wafer structure, having a strained silicon layer and capable of recycling a donor or a support substrate for use, with high reproducibility and intermediate products. <P>SOLUTION: The manufacturing method of the wafer structure having the strain silicon layer is provided with the support substrate 1 and includes a process that supplies a molding wafer, having a strain silicon model layer 3 on an upper surface; a process that epitaxially grows a strain-relaxed auxiliary SiGe layer 8 on the strain silicon model layer 3; a process that epitaxially grows a strain silicon active layer 11 on the strain-relaxed auxiliary SiGe layer 8; and a process that separates the structure at a predetermined separation region 9 produced in the auxiliary SiGe layer 8. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
