| 摘要 |
PROBLEM TO BE SOLVED: To provide a variable resistance element and a semiconductor device whose components are hardly damaged even if the element and the device are manufactured through manufacturing processes including a process under a deoxidization atmosphere or an oxidization atmosphere, and ensure high yield and stable quality. SOLUTION: The variable resistance element 101 in a memory element 1 has the component of a variable resistance layer 22 that is made of a metal oxide, and changes in resistance according to a control condition (voltage pulse application). In the variable resistance element 101, a hydrogen barrier layer 26 suppressing the diffusion of hydrogen to the variable resistance layer 22, a hydrogen barrier layer 19a in a lower electrode 19, and a buried insulating layer 21 having a function of suppressing hydrogen diffusion are formed in a peripheral area surrounding the variable resistance layer 22. COPYRIGHT: (C)2006,JPO&NCIPI |
