| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device which keeps pace with the upgraded performance of portable electronic equipment. SOLUTION: According to the semiconductor device, an active region 2a encircled with an element isolating film 3 is formed on a silicon board 1. On the active region 2a, an SiGe alloy layer 4 functioning as a base layer and an n-type diffusion layer 5 functioning as a emitter layer are formed, and are encircled with a side wall film 6 consisting of a silicon oxide film. Polycrystal silicon film 7 and a silicide film 8 formed on the n-type diffusion layer 5 and extend across the n-type diffusion layer 5, the side wall film 6, and the element isolating film 3. The side wall film 6 located to be under the polycrystal silicon film 7 is formed to extend across the boundary 50 between the active region 2a and the element isolating film 3, and has the upper part that is above the upper surface of the n-type diffusion layer 5. An inter-layer insulating film 10 is then formed to give a flat surface, and then an extension electrode 21 leading to the emitter layer (n-type diffusion layer 5) is so formed as to connect to the silicide film 8 on the element isolating film 3. COPYRIGHT: (C)2006,JPO&NCIPI
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