发明名称 |
Semiconductor memory devices including a vertical channel transistor and methods of manufacturing the same |
摘要 |
Semiconductor memory devices include a semiconductor substrate and a plurality of semiconductor material pillars in a spaced relationship on the semiconductor substrate. Respective surrounding gate electrodes surround ones of the pillars. A first source/drain region is in the semiconductor substrate between adjacent ones of the pillars and a second source/drain region is in an upper portion of at least one of the adjacent pillars. A buried bit line is in the first source/drain region and electrically coupled to the first source/drain region and a storage node electrode is on the upper portion of the at least one of the adjacent pillars and electrically contacting with the second source/drain region.
|
申请公布号 |
US2006097304(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20050151673 |
申请日期 |
2005.06.13 |
申请人 |
YOON JAE-MAN;PARK DONG-GUN;LEE CHOONG-HO;YI MOON-SUK;LEE CHUL |
发明人 |
YOON JAE-MAN;PARK DONG-GUN;LEE CHOONG-HO;YI MOON-SUK;LEE CHUL |
分类号 |
H01L29/94;H01L21/20 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|