A polishing head (200) for a chemical-mechanical polishing machine that holds a semiconductor wafer (150) against a polishing pad (140) has a chuck (295) with a pressure chamber (210) to apply a down force substantially equally to the wafer backside (152). An electrode arrangement (270) within the chamber (210) is located coplanar to the wafer (150) to provide compensation to wafer or chuck irregularities by applying a compensation force having a distribution corresponding to the irregularities.
申请公布号
DE60113972(T2)
申请公布日期
2006.05.11
申请号
DE2001613972T
申请日期
2001.03.14
申请人
FREESCALE SEMICONDUCTOR, INC.;SEMICONDUCTOR 300 GMBH & CO. KG;INFINEON TECHNOLOGIES AG
发明人
GLASHAUSER, WALTER;TEICHGRAEBER, LUTZ;HAGGART, DAVID;EBNER, KATRIN