SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To improve latch up resistance by reducing n well resistance while suppressing an increase in p well resistance, in a semiconductor device having a triple well structure.

SOLUTION: A plurality of n well regions 101 and a plurality of p well regions 102 are alternately formed in the substrate main surface direction, from the surface of p-type semiconductor substrate 100 to its interior. A Deep-n well region 103 is formed under the n well region 101 and p well region 102 of the p-type semiconductor substrate 100. The Deep-n well region 103 electrically connects the n well regions 101 together. At least a part of the p well regions 102 connects to a region of the p-type semiconductor substrate 100 where no Deep-n well region 103 is formed.

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