| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method by which a metal film as a material to be etched can be selectively etched to an organic film underlying the material to be etched. SOLUTION: In the etching method, an etching gas is introduced into an etching chamber in which the material to be etched is set, the material to be etched is etched by exciting the etching gas to a plasma state, and the material to be etched is the metal film 3 composed of Au, Pt, Ag, Ti, TiN, TiO, Al, and an aluminum alloy which are laminated to the organic film 5 or a laminated film formed of the films of the metals. The etching gas is a mixed gas to which at least one kind of gas selected from among Cl<SB>2</SB>, BCl<SB>3</SB>, and HBr and at least one kind of gas selected from among CH<SB>2</SB>Cl<SB>2</SB>, CH<SB>2</SB>Br<SB>2</SB>, CH<SB>3</SB>Cl, CH<SB>3</SB>Br, CH<SB>3</SB>F, and CH<SB>4</SB>are added. COPYRIGHT: (C)2006,JPO&NCIPI
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