| 摘要 |
Between a terminal of an element to be protected and a GND terminal, a protecting element is connected, which includes a first n+ region, an insulating region and a second n+ region. The first n+ region is provided to have a columnar shape in a depth direction of a substrate, and the second n+ region is formed to have a plate shape and disposed so as to face a bottom of the first n+ region. Thus, it is possible to allow a very large static current to flow into a ground potential through a first current path and a second current path. Thus, electrostatic energy reaching an operation region of a HEMT can be significantly reduced while hardly increasing a parasitic capacity.
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