| 摘要 |
Methods ( 102 ) are presented for protecting copper structures ( 26 ) from corrosion in the fabrication of semiconductor devices ( 2 ), wherein a thin semiconductor or copper-semiconductor alloy corrosion protection layer ( 30 ) is formed on an exposed surface ( 26 a) of a copper structure ( 26 ) prior to performance of metrology operations ( 206 ), so as to inhibit corrosion of the copper structure ( 26 ). All or a portion of the corrosion protection layer ( 30 ) is then removed ( 214 ) in forming an opening in an overlying dielectric ( 44 ) in a subsequent interconnect layer.
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