| 摘要 |
In a chemical mechanical polishing for removing a barrier and subsequent buffing a polyurethane polishing pad is used which is composed of for removal a barrier and buffing after a bulk copper removal to the barrier in a chemical mechanical polishing of a copper film deposited on a surface of a semiconductor wafer, at least one layer of the polishing pad is made from a mix composed of the prepolymer with an isocyanate concentration of between substantially 6.5% and 11.0% or from a monomer and an addition of isocyanate required to achieve a same molal concentration, with a shore D hardness less than substantially 35%.
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