Integrated semiconductor memory e.g. dynamic random access memory, has control circuit that is designed, such that it produces control signal to control voltage generator, based on value of measured equalizing current from detector circuit

摘要

The memory has a detector circuit to measure an equalizing current between an output port of a controllable voltage generator (30) of a control circuit (20) and a port to apply the preloading voltage. The detector circuit supplies the measured current to the control circuit. The control circuit is designed in such a manner that it produces a control signal to control the generator, depending on a value of the measured current. An independent claim is also included for a method of testing an integrated semiconductor memory.