发明名称 CURRENT INDUCED MAGNETORESISTANCE DEVICE
摘要 <p>The present invention provides for a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device of the present invention provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.</p>
申请公布号 WO2006049407(A1) 申请公布日期 2006.05.11
申请号 WO2005KR03606 申请日期 2005.10.28
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY;SHIN, KYUNG-HO;HOANG YEN, NGUYEN, THI;YI, HYUN-JUNG 发明人 SHIN, KYUNG-HO;HOANG YEN, NGUYEN, THI;YI, HYUN-JUNG
分类号 H01L43/08;G01R33/09;G11C11/16 主分类号 H01L43/08
代理机构 代理人
主权项
地址