SOLID-STATE IMAGE PICKUP DEVICE

摘要

A semiconductor substrate (1) of a solid-state image pickup device is provided with a plurality of photosensitive cells arranged in matrix with a photodiode on each, and a peripheral driving circuit which has a plurality of transistors and drives the photosensitive cells. As the transistors, a first transistor having a first diffusion layer (2) as a source or a drain to which a signal potential corresponding to a signal charge generated by the photodiode is transmitted to be held, and a second transistor having a second diffusion layer as a source and a drain to which the signal potential is not transmitted. An edge interval (D1) between an edge of a metal silicide layer (4) formed on the surface of the first diffusion layer of the first transistor and an edge of a gate electrode (6) is larger than an edge interval between an edge of a metal silicide layer formed on the surface of the second diffusion layer of the second transistor and the edge of a gate electrode. A leak current at the transistor of the peripheral driving circuit is suppressed, and picked up image information can be highly accurately held.