| 发明名称 |
METHOD FOR FABRICATING PHASE SHIFT MASK, AND PHASE SHIFT MASK |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method (1100) for fabricating a phase shift mask (104). <P>SOLUTION: A trenched phase shift mask (104) having portions of a light-blocking layer (206) thereon is formed (1102). A layer (802) comprising an anti-reflective material is formed on the trenched phase shift mask (104) and the portions of the light-blocking layer (206) (1104). The anti-reflective material (802) is then removed on horizontal surfaces of the trenched phase shift mask (104) and of the portions of the light-blocking layer (206). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006119651(A) |
申请公布日期 |
2006.05.11 |
| 申请号 |
JP20050306747 |
申请日期 |
2005.10.21 |
| 申请人 |
CHARTERED SEMICONDUCTOR MFG LTD |
发明人 |
TAN SIA KIM;LIN QUNYING;HSIA LIANG-CHOO |
| 分类号 |
G03F1/08;H01L21/027 |
主分类号 |
G03F1/08 |
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