| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method that improves the endpoint detection precision by controlling the abrasive (slurry) for barrier metal abrasion and abrasion conditions. <P>SOLUTION: This method includes a step for forming a concave in an insulated film 5 formed on a wafer, a step for forming a first conductive film 4 on the concave, a step for stacking a second conductive film on the first conductive film 4 in a way that the concave is embedded, and a step for removing the second conductive film extruding from the concave and the first conductive film through abrasion. To remove the first conductive film 4, this method detects the endpoint of abrasion by sensing a change in the intensity of a reflected light 104 from the wafer against an incoming light 101 irradiated to the wafer from a light source, and employs an abrasive powder 102 allowing 20% or more of the incoming light 101 with a wavelength of 500 nm to 700 nm to pass. In this way, the endpoint of barrier metal removal can be detected optically with a high precision without being affected by thinned barrier metal films during greater semiconductor circuit integration. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
