| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-on resistance power IC that has the power module and control circuit module positioned adjacently on the surface of a semiconductor substrate, ensures high heat dissipation, and prevents a temperature rise due to instantaneous power device heat generation. <P>SOLUTION: This power IC 100 contains a power module made of multiple power devices connected in parallel and a control circuit module constituting power device control circuits in a structure where both are positioned adjacently on the surface of a semiconductor substrate 1. In this power IC 100, the power metals 20a to 20d, which function as the external electrodes of a power device, are formed just above the power module via the inter-layer insulated films 1a and 1b, and the power metals 20a to 20d are extended just above the control circuit module. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
