| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method where a wiring is not damaged, and, for preventing an Air Gap and a connection hole from penetrating each other when alignment deviation occurs. SOLUTION: The semiconductor device manufacturing method is provided with a process of forming a plurality of lower layer wirings 103 in a first insulating film 101; a process of forming an inter-wiring gap 106 by removing a part existing between the lower layer wirings 103; a process of forming a second insulating film 107 so as to form the air gap 108 on the lower layer wiring 103 and the first insulating film 101, to which the inter-wiring gap 106 has been formed, and a process for forming a via 109 connected with the lower layer wiring 103 in the second insulating film 107, and also, for forming an upper layer wiring 110 connected with the via 109. The via 109 is formed so as to be connected with the lower layer wiring 103, to which the air gap 108 is not formed adjacently. COPYRIGHT: (C)2006,JPO&NCIPI |
