| 摘要 |
A method of flip-chip bonding can favorably activate the bonding surfaces and remove oxide films when bonding pads and bumps of a semiconductor chip and a substrate and avoids problems such as the bumps being excessively flattened and the bonds between connection terminals being destroyed by subsequent ultrasonic vibration. The method includes an aligning step 2 that aligns and places in contact bumps or pads of a semiconductor chip and pads or bumps of a substrate, a leveling step 4 that levels the shapes of the bumps by pressing together the semiconductor chip and the substrate with a first predetermined load, a bonding preparation step 6 that applies ultrasonic vibration to the semiconductor chip and/or the substrate so that the amplitude of the ultrasonic vibration gradually increases while the first predetermined load weakens, and a bonding step 8 that bonds the bumps and pads by applying ultrasonic vibration to the semiconductor chip and/or the substrate in a state where the semiconductor chip and the substrate are pressed together with a second predetermined load that is smaller than the first predetermined load.
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