| 摘要 |
<p>Disclosed are a method and apparatus enabling to generate a plasma even in an extremely low-pressure space. Also disclosed are a method and apparatus for low-pressure magnetron sputtering which enable to form a dense and smooth film by using such method and apparatus for plasma generation. Specifically disclosed is a plasma generation method wherein a plasma is generated in a vacuum chamber by generating a magnetic field of at least not less than 2000 oersted in the plasma generating position, while using a xenon or krypton gas as the inert gas species and setting the gas pressure within a range from 5.0 × 10<SUP>-3</SUP> Pa to 1.2 × 10<SUP>-2</SUP> Pa. Also specifically disclosed is a plasma generation apparatus comprising an electrode arranged in a vacuum chamber, a power supply for applying a voltage to the electrode, a magnetic field-generating means for generating a magnetic field of at least not less than 2000 oersted in the plasma generating position within the vacuum chamber, and a gas-introducing means for introducing a xenon or krypton gas into the vacuum chamber so that the gas pressure within the vacuum chamber is within a range from 5.0 × 10<SUP>-3</SUP> Pa to 1.2 × 10<SUP>-2</SUP> Pa.</p> |
