| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-k gate insulating film excellent in thermal stability. SOLUTION: A high-k film 14 of HfO2 is deposited on a substrate 11 using a CVD method. Then, a gate electrode 15 is formed on the high-k film 14. Then, an activate annealing treatment to an impurity poured into a source/drain region or the gate electrode 15 is carried out. When the deposition temperature of the high-k film 14 is set to x [°C] and the temperature of the activate annealing treatment is set to y [°C], x and y satisfy y≤0.5×x+825. COPYRIGHT: (C)2006,JPO&NCIPI
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