| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which has an SOI-LDMOS of a good electric characteristic without impairing an integration and a productive cost. SOLUTION: A p-type body region 3 and a gate electrode 5 have a p-type body region protrusion 3a and a gate electrode protrusion 5a protruding partially in the longitudinal direction of a gate on a source side. In an SOI layer 30, an n<SP>+</SP>-type source diffusion region 9 is formed adjacent to the p-type body region 3, and also, a p<SP>+</SP>-type body contact diffusion region 7B(7A) is formed adjacent to the p-type body region protrusion 3a. This p<SP>+</SP>-type body contact diffusion region 7B is formed at the center of the n<SP>+</SP>-type source diffusion region 9 in plan view, and has an electric connection relation with the p-type body region protrusion 3a. COPYRIGHT: (C)2006,JPO&NCIPI
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