| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate with high flatness and excellent thickness uniformity using an epitaxial growth method. SOLUTION: The method of manufacturing the semiconductor substrate includes a step of forming a silicon polycrystalline film 14 in advance on at least the chamfer 13 of a silicon single crystal substrate 10, and a step of then forming a thin film 11 of a silicon single crystal by epitaxial growth on a surface 11 of the substrate 10. Since the polycrystalline film 14 is formed on the chamfer 13 of the substrate, facet growth does not occur there when the epitaxial growth takes place, and a polycrystalline epitaxial film 16 is formed along the shape of the chamfered periphery. As a result, the occurrence of an edge crown is prevented and the epitaxial film is formed with uniform thickness. COPYRIGHT: (C)2006,JPO&NCIPI
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