SILICON CARBIDE ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To restrain the deterioration of element characteristics caused due to basal plane dislocation, existing in the semiconductor substrate, in a semiconductor element. SOLUTION: The semiconductor element comprises the semiconductor substrate 11, a semiconductor layer 20 formed on the surface of the semiconductor substrate 11, a gate insulating film 16 formed on the semiconductor layer 20, and a gate electrode 19 insulated from the semiconductor layer 20 via the gate insulating film 16. Density of the basal plane dislocation is≥104cm-2in the semiconductor substrate 11, and the density of the basal plane dislocation is≤103cm-2at a portion on the surface of the semiconductor layer 20 facing the gate electrode 19. COPYRIGHT: (C)2006,JPO&NCIPI