| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor in which an emitter electrode having a T-shaped cross-section can be micromachined while being ensured in high precision manufacturing, and to provide its fabrication process. SOLUTION: The heterojunction bipolar transistor 1 comprises a multilayer of a collector layer 2, a base layer 3, an emitter layer 4 and an emitter cap layer 5, and an emitter electrode 12b having a T-shaped cross-section substantially aligned with the end of a mesa 7 of the emitter cap layer 5. COPYRIGHT: (C)2006,JPO&NCIPI
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