SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of causing a great change in the resistance of a variable resistance layer by a few times of voltage pulse application and shows high working speed, and also provide a driving method for the semiconductor device. SOLUTION: A variable resistance element unit 100 consists of a first electrode 111 and a variable resistance layer 120 which are overlaid in this order on one main surface of the board 10, and a second electrode 112 overlaid on a part of the main surface of the variable resistance layer 120. By applying a voltage pulse to the first and second electrodes 111, 112 sandwiching the variable resistance layer 120 in the variable resistance element unit 100, carriers are injected into the variable resistance layer 120, whose resistance increases in response to the carrier injection by three or more orders of magnitude. The injected carriers have a current density of 104A/cm2or higher. COPYRIGHT: (C)2006,JPO&NCIPI