| 发明名称 |
Bipolar transistor |
| 摘要 |
A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.
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| 申请公布号 |
US2006097352(A1) |
申请公布日期 |
2006.05.11 |
| 申请号 |
US20050521106 |
申请日期 |
2005.09.13 |
| 申请人 |
BOCK JOSEF;MEISTER THOMAS;ROMANYUK ANDRIY;SCHAFER HERBERT |
发明人 |
BOCK JOSEF;MEISTER THOMAS;ROMANYUK ANDRIY;SCHAFER HERBERT |
| 分类号 |
H01L21/28;H01L27/082;H01L21/331;H01L29/167;H01L29/417;H01L29/423;H01L29/732 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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