| 摘要 |
Embodiments of the present invention are directed to methods for forming non-volatile memory devices. A substrate is provided that has a cell region, a first peripheral region, and second peripheral region. A tunnel insulating layer is formed on the substrate in the cell region. A preliminary floating gate is formed on the tunnel insulating layer in the cell region. A blocking insulating layer is formed on the substrate in the cell region, the first peripheral region, and the second peripheral region. A conductive layer is formed on the blocking insulating layer in the cell region, the first peripheral region, and the second peripheral region. The conductive layer and the blocking insulating layer in the first and second peripheral regions are removed to expose at least a portion of the substrate in the first and second peripheral regions. First and second gate insulating layers are respectively formed on the exposed substrate of the first and second peripheral regions. An undoped silicon layer is formed on the substrate in the cell region, the first peripheral region, and the second peripheral region. The undoped silicon layer in the first peripheral region is doped with impurities of a first-conductivity-type. The undoped silicon layer in the second peripheral region is doped with impurities of a second-conductivity-type.
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