Methods of conducting wafer level burn-in of electronic devices

摘要

Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes ( 210, 215 ). Electrical bias ( 920 ) and/or thermal power ( 925 ) is applied on each side of a wafer ( 100 ) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer ( 910 ) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system ( 950 ) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact ( 915 ) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate ( 910 ) to a substrate surface of said semiconductor wafer; providing electrical power ( 920 ) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power ( 935 ) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period ( 955 ); and removing electrical and physical contact to said semiconductor wafer ( 965 ).