| 摘要 |
To provide a surface-emitting type semiconductor laser that is capable of emitting a laser beam with a narrower radiation angle. A surface-emitting type semiconductor laser in accordance with the present invention includes: a substrate 110 ; a first mirror 142 provided above the substrate 110 ; an active layer 144 provided above the first mirror 142 ; a second mirror 146 provided above the active layer 144 ; an electrode 122 provided above the second mirror 146 ; and an emission surface 126 among the second mirror 146 , which is not covered by the electrode 122 , wherein the electrode 122 has a film thickness D that satisfies a formula (1) as follows, (4i+1)lambda/8n<=D<=(4i+3)lambda/8n . . . (1) where, in the formula (1), i is an integer, lambda is an oscillation wavelength, and n is a refractive index of a material that covers the emission surface.
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